www.irf.com 1 6/29/00 irfr13n15d irfu13n15d smps mosfet hexfet ? power mosfet v dss r ds(on) max i d 150v 0.18 w 14a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 14 i d @ t c = 100c continuous drain current, v gs @ 10v 9.8 a i dm pulsed drain current ? 56 p d @t c = 25c power dissipation 86 w linear derating factor 0.57 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt ? 3.8 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes ? through ? are on page 10 d-pak irfr13n15d i-pak irfu13n15d pd - 93905a l high frequency dc-dc converters benefits applications l low gate-to-drain charge to reduce switching losses l fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) l fully characterized avalanche voltage and current typical smps topologies l telecom 48v input active clamp forward converter
2 www.irf.com irfr13n15d/irfu13n15d parameter min. typ. max. units conditions g fs forward transconductance 5.0 CCC CCC s v ds = 50v, i d = 8.3a q g total gate charge CCC 19 29 i d = 8.3a q gs gate-to-source charge CCC 5.5 8.2 nc v ds = 120v q gd gate-to-drain ("miller") charge CCC 9.4 14 v gs = 10v, ? t d(on) turn-on delay time CCC 8.0 CCC v dd = 75v t r rise time CCC 26 CCC i d = 8.3a t d(off) turn-off delay time CCC 12 CCC r g = 11 w t f fall time CCC 11 CCC v gs = 10v ? c iss input capacitance CCC 620 CCC v gs = 0v c oss output capacitance CCC 130 CCC v ds = 25v c rss reverse transfer capacitance CCC 38 CCC pf ? = 1.0mhz c oss output capacitance CCC 780 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 62 CCC v gs = 0v, v ds = 120v, ? = 1.0mhz c oss eff. effective output capacitance CCC 110 CCC v gs = 0v, v ds = 0v to 120v ? dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ? CCC 130 mj i ar avalanche current ? CCC 8.3 a e ar repetitive avalanche energy ? CCC 8.6 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 8.3a, v gs = 0v ? t rr reverse recovery time CCC 110 CCC ns t j = 25c, i f = 8.3a q rr reverse recoverycharge CCC 520 CCC nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 14 56 a static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.17 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.18 w v gs = 10v, i d = 8.3a ? v gs(th) gate threshold voltage 3.0 CCC 5.5 v v ds = v gs , i d = 250a CCC CCC 25 a v ds = 150v, v gs = 0v CCC CCC 250 v ds = 120v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v i gss i dss drain-to-source leakage current parameter typ. max. units r q jc junction-to-case CCC 1.75 r q ja junction-to-ambient (pcb mount)* CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance
www.irf.com 3 irfr13n15d/irfu13n15d fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 5 6 7 8 9 10 11 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 14a 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v
4 www.irf.com irfr13n15d/irfu13n15d fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 5 10 15 20 25 30 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 8.3a v = 30v ds v = 75v ds v = 120v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 0.1 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) sin g le pulse t t = 175 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
www.irf.com 5 irfr13n15d/irfu13n15d fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 t , case temperature ( c) i , drain current (a) c d
6 www.irf.com irfr13n15d/irfu13n15d q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 40 80 120 160 200 240 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.4a 5.9a 8.3a
www.irf.com 7 irfr13n15d/irfu13n15d p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
8 www.irf.com irfr13n15d/irfu13n15d d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006).
www.irf.com 9 irfr13n15d/irfu13n15d i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
10 www.irf.com irfr13n15d/irfu13n15d d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 6/00 ? repetitive rating; pulse width limited by max. junction temperature. ? i sd 8.3a, di/dt 280a/s, v dd v (br)dss , t j 175c notes: ? starting t j = 25c, l = 3.8mh r g = 25 w , i as = 8.3a. ? pulse width 300s; duty cycle 2%. ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss * when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.
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